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FS50SMJ-3
High-Speed Switching Use Nch Power MOS FET
REJ03G1423-0300 Rev.3.00 Nov 21, 2006
Features
* * * * * Drive voltage : 4 V VDSS : 150 V rDS(ON) (max) : 30 m ID : 50 A Integrated Fast Recovery Diode (TYP.) : 125 ns
Outline
RENESAS Package code: PRSS0004ZB-A (Package name: TO-3P)
4 2, 4
1 1
1. 2. 3. 4.
Gate Drain Source Drain
2
3 3
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- Ratings 150 20 50 200 50 50 200 150 - 55 to +150 - 55 to +150 4.8 Unit V V A A A A A W C C g Conditions VGS = 0 V VDS = 0 V
L = 100 H
Typical value
Rev.3.00
Nov 21, 2006
page 1 of 6
FS50SMJ-3
Electrical Characteristics
(Tch = 25C)
Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min 150 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- 1.5 23 24 0.58 62 8200 870 440 54 110 850 340 1.0 -- 125 Max -- 0.1 0.1 2.0 30 31 0.75 -- -- -- -- -- -- -- -- 1.5 0.83 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Test Conditions ID = 1 mA, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 150 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 V ID = 25 A, VGS = 4 V ID = 25 A, VGS = 10 V ID = 25 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 80 V, ID = 25 A, VGS = 10 V, RGEN = RGS = 50 IS = 25 A, VGS = 0 V Channel to case IS = 50 A, dis/dt = - 100 A/s
Rev.3.00
Nov 21, 2006
page 2 of 6
FS50SMJ-3
Performance Curves
Power Dissipation Derating Curve
200 3 2
Maximum Safe Operating Area
tw =
Power Dissipation PD (W)
10
Drain Current ID (A)
160
120
102 7 5 3 2 101 7 5 3 2
10 0 s
s
DC
80
40
0
0
50
100
150
200
100 Tc = 25C 7 Single Pulse 5 30 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Case Temperature Tc (C)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
100
VGS = 10V 5V 4V
Output Characteristics (Typical)
50
VGS = 10V 5V 4V 3V
Tc = 25C Pulse Test
Drain Current ID (A)
60
3V
Drain Current ID (A)
80
40
30
40
PD = 150W
20
2.5V
20
10
Tc = 25C Pulse Test
0 0 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Drain-Source On-State Voltage VDS(ON) (V)
Drain-Source On-State Resistance rDS(ON) (m)
On-State Voltage vs. Gate-Source Voltage (Typical)
2.0
ID = 100A
On-State Resistance vs. Drain Current (Typical)
40
Tc = 25C Pulse Test
32
1.6
80A
1.2
50A
24
VGS = 4V 10V
0.8
16
0.4
Tc = 25C Pulse Test
20A
8 0
0
0
2
4
6
8
10
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.00
Nov 21, 2006
page 3 of 6
FS50SMJ-3
Forward Transfer Admittance vs. Drain Current (Typical)
Forward Transfer Admittance | yfs | (S)
102 7 5 4 3 2 101 7 5 4 3 2 100 0 10 2 3 4 5 7 101
75C 125C
Transfer Characteristics (Typical)
100
Drain Current ID (A)
80
Tc = 25C VDS = 10V Pulse Test
TC = 25C
60
40
20
VDS = 10V Pulse Test
2 3 4 5 7 102
0
0
2
4
6
8
10
Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical)
2 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2
Ciss
Drain Current ID (A)
Switching Characteristics (Typical)
104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 10 23
td(off) tf
Capacitance C (pF)
Coss
Crss
Switching Time (ns)
Tch = 25C VDD = 80V VGS = 10V RGEN = RGS = 50
tr td(on)
Tch = 25C f = 1MHz VGS = 0V
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
5 7 101
23
5 7 102
Drain-Source Voltage VDS (V) Gate-Source Voltage vs. Gate Charge (Typical)
10 100
Drain Current ID (A) Source-Drain Diode Forward Characteristics (Typical)
VGS = 0V Pulse Test
Gate-Source Voltage VGS (V)
Tch = 25C ID = 50A
8
Source Current IS (A)
VDS = 50V
80
Tc = 125C
6
80V 100V
60
75C 25C
4
40
2
20
0
0
40
80
120
160
200
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source-Drain Voltage VSD (V)
Rev.3.00
Nov 21, 2006
page 4 of 6
FS50SMJ-3
On-State Resistance vs. Channel Temperature (Typical)
101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150
Drain-Source On-State Resistance rDS(ON) (25C)
Gate-Source Threshold Voltage VGS(th) (V)
Drain-Source On-State Resistance rDS(ON) (tC)
Threshold Voltage vs. Channel Temperature (Typical)
4.0
VGS = 10V ID = 25A Pulse Test
VDS = 10V ID = 1mA
3.2
2.4
1.6
0.8
0
-50
0
50
100
150
Channel Temperature Tch (C)
Channel Temperature Tch (C)
Drain-Source Breakdown Voltage V(BR)DSS (25C)
Transient Thermal Impedance Zth(ch-c) (C/W)
Drain-Source Breakdown Voltage V(BR)DSS (tC)
Breakdown Voltage vs. Channel Temperature (Typical)
1.4
Transient Thermal Impedance Characteristics
101 7 5 3 2 100 D = 1.0 7 5 0.5 3 0.2 2
0.1
VGS = 0V ID = 1mA
1.2
1.0
0.8
PDM
tw
0.6
10-1 7 5 3 2
0.05 0.02 0.01 Single Pulse
T D= tw T
0.4
-50
0
50
100
150
10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102
Channel Temperature Tch (C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor
Switching Waveform
90%
RGEN
10% 10% 10%
90% td(on) tr
90% td(off) tf
Rev.3.00
Nov 21, 2006
page 5 of 6
FS50SMJ-3
Package Dimensions
Package Name TO-3P* JEITA Package Code SC-65 RENESAS Code PRSS0004ZB-A Previous Code MASS[Typ.] 4.8g
Unit: mm
15.9Max
4.5 1.5
5.0 3.2 2
2
4
20.0
4.4
1.0
19.5Min
0.6 5.45 5.45
2.8
4
Order Code
Lead form Standard packing Quantity Standard order code Standard order code example FS50SMJ-3 FS50SMJ-3-A8
Straight type Static electricity prevention bag 20 Type name Lead form Plastic Magazine (Tube) 30 Type name - Lead forming code Note : Please confirm the specification about the shipping in detail.
Rev.3.00
Nov 21, 2006
page 6 of 6
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